Fully Integrated CMOS Radios from RF to Millimeter Wave Frequencies
نویسنده
چکیده
This paper reviews (a) recent CMOS demonstrations of capabilities for Radio Frequency (RF), microwave, and millimeter wave circuits from 1 GHz to 100 GHz, (b) advances in on-die isolation structures for integrating radio’s delicate circuits with very noisy general-purpose processors on the same die, and (c) entirely novel design methods for complex RF passive networks on the package substrate by engineering the physical design of the package substrate (no discrete passive components added to the package) that diminish the silicon area requirements for multiband multiprotocol CMOS radios and frees silicon area to host complex digital processing and communication engines. Circuit design techniques are discussed to cope with intrinsic CMOS challenges and technology scaling. Building upon these developments, a vision for CMOS technology and platform direction is proposed.
منابع مشابه
RF CMOS Integrated Circuit: History, Current Status and Future Prospects
As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SD...
متن کاملMillimeter-Wave/Sub-Terahertz CMOS Transceivers for High-Speed Wireless Communications
Millimeter-Wave/Sub-Terahertz CMOS Transceivers for High-Speed Wireless Communications by Shinwon Kang Doctor of Philosophy in Electrical Engineering and Computer Sciences University of California, Berkeley Professor Ali M. Niknejad, Chair Millimeter-wave and sub-terahertz frequency bands are available for wideband applications such as high data-rate communication systems. As the respective wav...
متن کاملTehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication
There have recently been more and more reports on CMOS integrated circuits operating at terahertz (≥ 0.1THz) frequencies. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews recent progress made by the authors in terahertz CMOS design for low-power and high-speed wireless communication, including device characterization and modelin...
متن کاملGallium Phosphide IMPATT Sources for Millimeter-Wave Applications
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...
متن کاملEfficient Transmitters for Wireless Communications in Nanoscale CMOS Technology
Efficient Transmitters for Wireless Communications in Nanoscale CMOS Technology by Debopriyo Chowdhury Doctor of Philosophy in Engineering Electrical Engineering and Computer Sciences University of California, Berkeley Professor Ali M. Niknejad, Chair The last decade has witnessed a tremendous growth in wireless communications. Todays consumers demand wireless systems that are low-cost, power e...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2004